(Metal Oxide Semiconductor Field- Effect Transistor) The fundamental building block of modern VLSI chips such as microprocessors and memory chips. A microscopically small FIELD-EFFECT TRANSISTOR formed on the surface of a prepared silicon wafer by exposing it to a succession of chemical treatments through a sequence of masks.
Each transistor consists of a GATE formed from POLYSILICON separated by a thin layer of silicon oxide insulation from the underlying DIFFUSION LAYER in which the SOURCE and DRAIN are formed by DOPING the silicon surface.
Thin tracks formed in a final metal layer (of aluminium or copper) join all these transistors together to form a complex electronic circuit.